Infineon IRF1010NSTRRPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 11 Milliohms,ID 85A,D2Pak,PD 180W,VGS +/-20V
Mfr. Part #: IRF1010NSTRRPBF / RS Stock #: 70017646
Price
Qty.
Standard Price
800
$2.43
1600
$2.381
2400
$2.309
3200
$2.211
4000
$2.066
4800
$1.895
5600
$1.701
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Single
Drain Current
85 A
Drain to Source On Resistance
11 mΩ
Drain to Source Voltage
55 V
Forward Transconductance
32 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±20 V
Input Capacitance
3210 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
D2PAK
Polarization
N-Channel
Power Dissipation
180 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
120 nC
Turn Off Delay Time
39 ns
Turn On Delay Time
13 ns
Typical Gate Charge @ Vgs
Maximum of 120 nC @ 10 V
Voltage, Breakdown, Drain to Source
55 V