Infineon IRFR3518PBF
IRFR3518PBF N-channel MOSFET Transistor, 38 A, 80 V, 3-Pin DPAK
Mfr. Part #: IRFR3518PBF / RS Stock #: 70018321
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Price
Qty.
Standard Price
5
$1.38
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Single
Drain Current
38 Amp
Drain to Source On Resistance
29 mOhms
Drain to Source Voltage
80 V
Forward Transconductance
34 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
20 V
Input Capacitance
1710 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Power Dissipation
110 W
Temperature Operating Range
-55 to +175 °C
Turn Off Delay Time
37 ns
Turn On Delay Time
12 ns
Typical Gate Charge @ Vgs
37 nC @ 10 V
Overview
N-Channel Power MOSFET 30A to 39A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
