Infineon IRFL4105PBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.045Ohm,ID 3.7A,SOT-223,PD 1W,VGS +/-20V
Mfr. Part #: IRFL4105PBF / RS Stock #: 70017599
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Price
Qty.
Standard Price
20
$1.17
40
$1.03
60
$0.91
80
$0.77
100
$0.70
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Dual Drain
Drain Current
5.2 A
Drain to Source On Resistance
0.045 Ω
Drain to Source Voltage
55 V
Forward Transconductance
3.8 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±20 V
Input Capacitance
660 pF @ 25 V pF
Maximum Operating Temperature
150 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
SOT-223
Polarization
N-Channel
Power Dissipation
2.1 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +150 °C
Total Gate Charge
23 nC
Turn Off Delay Time
19 ns
Turn On Delay Time
7.1 ns
Typical Gate Charge @ Vgs
23 nC @ 10 V
Voltage, Breakdown, Drain to Source
55 V
Overview
N-Channel Power MOSFET up to 7A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.