Infineon IRF1404PBF
MOSFET, Power,N-Ch,VDSS 40V,RDS(ON) 0.0035Ohm,ID 202A,TO-220AB,PD 333W,VGS+/-20V
Mfr. Part #: IRF1404PBF / RS Stock #: 70017208
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
1
$2.12
10
$2.01
50
$1.90
100
$1.80
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Single
Drain Current
202 Amp
Drain to Source On Resistance
0.004 Ohms
Drain to Source Voltage
40 V
Forward Transconductance
76 sec
Forward Voltage, Diode
1.5 V
Gate to Source Voltage
20 V
Input Capacitance
5669 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
333 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
131 nC
Turn Off Delay Time
46 ns
Turn On Delay Time
17 ns
Typical Gate Charge @ Vgs
131 nC @ 10 V
Voltage, Breakdown, Drain to Source
40 V
Overview
N-Channel Power MOSFET over 100A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
