Vishay PCS IRF640PBF
MOSFET, Power,N-Ch,VDSS 200V,RDS(ON) 0.18Ohm,ID 18A,TO-220AB,PD 125W,VGS +/-20V
Mfr. Part #: IRF640PBF / RS Stock #: 70078855
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Price
Qty.
Standard Price
1
$1.21
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Single
Drain Current
18 A
Drain to Source On Resistance
0.18 Ohms
Drain to Source Voltage
200 V
Forward Transconductance
6.7 S
Forward Voltage, Diode
2 V
Gate to Source Voltage
20 V
Input Capacitance
1300 pF @ 25 V pF
Maximum Operating Temperature
150 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
125 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +150 °C
Total Gate Charge
70 nC
Turn Off Delay Time
45 ns
Turn On Delay Time
14 ns
Typical Gate Charge @ Vgs
Maximum of 70 nC @ 10 V
Voltage, Breakdown, Drain to Source
200 V
Overview
Vishay IRF Series Power MOSFETs
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
Fast Switching
P-Channel
Dynamic dV/dt Rating
Compliant to RoHS Directive 2002/95/EC
Ease of Paralleling
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
