All Products


Vishay PCS - VS-HFA04SD60SPBF - VS-HFA04SD60SPBF,  SMT Switching Diode,  600V 4A,  42ns,  3-Pin DPAK View larger image View larger image
Image may be a representation.
See specs for product details.

Vishay PCS VS-HFA04SD60SPBF, SMT Switching Diode, 600V 4A, 42ns, 3-Pin DPAK
Mfr. Part#:

Allied Stock#: 70078833

 RoHS Compliant Part



View VS-HFA04SD60SPBF Datasheet Datasheet

View More from Vishay PCS >>
Pricing (USD) & Availability
Standard Pricing
$0.600 (Each)

0 can ship immediately.

Request Lead Time

Minimum Quantity: 3000 |  Multiples Of: 3000


Brand/Series: VS-HFA Series
Capacitance, Junction: 8 pF
Configuration: Single
Current, Forward, Continuous: 4 A
Current, On-State, Non-Repetitive Peak: 25 A
Current, Peak: 300 μA
Current, Surge: 25 A
Dimensions: 6.73 x 2.39 x 6.22 mm
Diode Type: Ultra Fast Rectifier
Height: 0.245" (6.22mm)
Length: 0.264" (6.73mm)
Mounting Type: Through Hole
Number of Pins: 2
Package Type: TO-252AA
Power Dissipation: 10 W
Primary Type: Rectifier
Rectifier Type: Switching
Resistance, Thermal, Junction to Case: 5 °C/W
Speed, Switching: Ultrafast
Temperature, Junction, Maximum: +150 °C
Temperature, Operating: -55 to +150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Recovery: 17 ns
Time, Reverse Recovery: 57 ns
Voltage, Forward: 1.8 V
Voltage, Repetitive Peak: 600 V
Width: 0.094" (2.39mm)


In addition to ultra fast recovery time, the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to “snap-off”" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes.

  • Ultrafast Recovery
  • Ultrasoft Recovery
  • Very Low IRRM
  • Very Low Qrr
  • Specified at Operating Conditions

  • Reduced RFI and EMI
  • Reduced Power Loss in Diode and Switching Transistor
  • Higher Frequency Operation
  • Reduced Snubbing
  • Reduced Parts Count