Vishay PCS IRFI9530GPBF
MOSFET, Power,P-Ch,VDSS -100V,RDS(ON) 0.3Ohm,ID -7.7A,TO-220 Full-Pak,PD 42W
Mfr. Part #: IRFI9530GPBF / RS Stock #: 70078906
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Price
Qty.
Standard Price
1000
$2.02
10000
$1.92
50000
$1.82
100000
$1.72
Additional Inventory
Product Specifications
Product Attribute
Attribute Value
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Channel Type
P
Configuration
Single
Dimensions
0.64 in H X 0.00 in W X 0.42 in L
Drain Current
-5.4 A
Drain to Source On Resistance
0.3 Ohms
Drain to Source Voltage
-100 V
Forward Transconductance
3.4 S
Forward Voltage, Diode
-6.3 V
Gate to Source Voltage
20 V
Input Capacitance
860 pF @ -25 v pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220
Polarization
P-Channel
Power Dissipation
42 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
38 nC
Turn Off Delay Time
31 ns
Turn On Delay Time
12 ns
Typical Gate Charge @ Vgs
Maximum of 38 nC @ -10 V
Voltage, Breakdown, Drain to Source
-100 V
Overview
Vishay IRF Series Power MOSFETs
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features:
Fast Switching
P-Channel
Dynamic dV/dt Rating
Compliant to RoHS Directive 2002/95/EC
Ease of Paralleling
Third-generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance, and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
Features: