Siliconix / Vishay SI7846DP-T1

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MOSFET; Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ohm; ID 4A; PowerPAK SO-8; PD 1.9W; -55deg
Mfr. Part#: SI7846DP-T1
Allied Stock#: 70026013

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Specifications

Application : Primary side switch for high density DC⁄DC, telecom⁄server 48-V DC⁄DC, industrial and 42-V automotive
Channel Type : N-Channel
Current, Drain : 4 A
Fall Time : 10 ns (Typ.)
Gate Charge, Total : 30 nC
Operating and Storage Temperature : -55 to 150 °C
Package Type : PowerPAK SO-8
Polarization : N-Channel
Power Dissipation : 1.9 W
Product Header : TrenchFET® Power MOSFET
Resistance, Drain to Source On : 0.041 Ohm
Resistance, Thermal, Junction to Case : 1.5 °C⁄W (Typ.)
Series : SI78 Series
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Thermal Resistance, Junction to Ambient : 52 °C⁄W
Time, Rise : 7 ns (Typ.)
Time, Turn-Off Delay : 22 ns
Time, Turn-On Delay : 12 ns
Transconductance, Forward : 18 S
Voltage, Breakdown, Drain to Source : 150 V
Voltage, Forward, Diode : 0.75 V
Voltage, Gate to Source : ±20 V

Overview

N-Channel Power MOSFET, PowerPAK SO-8 Package, 1.9 W

Product Added to Cart
Siliconix / Vishay
MOSFET; Power; N-Ch; VDSS 150V; RDS(ON) 0.041Ohm; ID 4A; PowerPAK SO-8; PD 1.9W; -55deg
Allied Stock #: 70026013
Mfr's Part #: SI7846DP-T1
($1.000) Each
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