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Siliconix / Vishay SI2323DS-T1-E3

Siliconix / Vishay - SI2323DS-T1-E3 - MOSFET,  Power;  P-Ch;  VDSS -20V;  RDS(ON) 0.031Ohm;  ID -3.7A;  TO-236 (SOT-23);  PD 0.75W View larger image View larger image
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Siliconix / Vishay MOSFET, Power; P-Ch; VDSS -20V; RDS(ON) 0.031Ohm; ID -3.7A; TO-236 (SOT-23); PD 0.75W
Mfr. Part#:

Allied Stock#: 70026097

 RoHS Compliant Part

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Pricing (USD) & Availability
Special Pricing
$0.389 (Each)
1$0.389(Save 36%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$0.604 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: SI23 Series
Capacitance, Input: 1020 pF @ -10 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -2.9 A
Dimensions: 3.04 x 1.4 x 1.02 mm
Gate Charge, Total: 12.5 nC
Height: 0.04" (1.02mm)
Length: 0.119" (3.04mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-236
Polarization: P-Channel
Power Dissipation: 0.75 W
Resistance, Drain to Source On: 0.068 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 71 ns
Time, Turn-On Delay: 25 ns
Transconductance, Forward: 16 S
Typical Gate Charge @ Vgs: 12.5 nC @ -4.5 V
Voltage, Breakdown, Drain to Source: -20 V
Voltage, Drain to Source: -20 V
Voltage, Forward, Diode: 0.75 V
Voltage, Gate to Source: ±8 V
Width: 0.055" (1.4mm)


  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers
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