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Siliconix / Vishay

Siliconix / Vishay SI1026X-T1-GE3

Mfr. Part #: SI1026X-T1-GE3
Allied Stock #: 70026182

Description

SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89

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3000

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Product Specifications
Product Attribute Attribute Value Search
Channel Type N
Configuration Single
Dimensions 1.7 x 1.2 x 0.5 mm
Drain Current 305 A
Drain to Source On Resistance 3 Ω
Drain to Source Voltage 60 V
Forward Transconductance 200 mS
Forward Voltage, Diode 1.4 V
Gate to Source Voltage ±20 V
Height 0.02" (0.5mm)
Input Capacitance 30 pF @ 25 V
Length 0.066" (1.68mm)
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Mounting Type Surface Mount
Number of Elements per Chip 2
Number of Pins 6
Operating and Storage Temperature –55 TO +150 C
Package Type SC-89
Polarization N-Channel
Power Dissipation 250 mW
Series SI10 Series
Temperature Operating Range -55 to +150 °C
Total Gate Charge 600 pC
Turn Off Delay Time 20 ns
Turn On Delay Time 15 ns
Typical Gate Charge @ Vgs 600 nC @ 4.5 V
Voltage, Breakdown, Drain to Source 60 V
Width 0.047" (1.2mm)
Product Added to Cart
Siliconix / Vishay
SI1026X-T1-GE3 Dual N-channel MOSFET Transistor; 0.3 A; 60 V; 6-Pin SC-89
Allied Stock #: 70026182
Mfr's Part #: SI1026X-T1-GE3
$0.182 Each
Quantity added: