Infineon IRLL024NTRPBF

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MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
Manufacturer #: IRLL024NTRPBF
Allied Stock #: 70017816

RoHS Compliant Part



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$0.58 (Each)
2500 $0.58

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Minimum Quantity: 2500

Multiples Of: 2500
Product Specifications
Product Attribute Attribute Value Search
Product Header Hexfet® Power MOSFET
Series HEXFET Series
Configuration Single
Dimensions 6.70 x 3.70 x 1.45 mm
Height 0.057" (1.45mm)
Length 0.263" (6.7mm)
Mounting Type Surface Mount
Number of Pins 3
Package Type SOT-223
Power Dissipation 2.1 W
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Time, Turn-Off Delay 18 ns
Time, Turn-On Delay 7.4 ns
Width 0.146" (3.7mm)
Capacitance, Input 510 pF @ 25 V
Voltage, Drain to Source 55 V
Voltage, Gate to Source ±16 V
Channel Type N
Current, Drain 4.4 A
Polarization N-Channel
Resistance, Drain to Source On 0.1 Ω
Temperature Operating Range -55 to +150 °C
Forward Transconductance 3.3 S
Voltage, Breakdown, Drain to Source 55 V
Voltage, Forward, Diode 1 V
Gate Charge, Total 10.4 nC
Typical Gate Charge @ Vgs 10.4 nC @ 5 V
Number of Elements per Chip 1


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
Allied Stock #: 70017816
Mfr's Part #: IRLL024NTRPBF
$0.580 Each
Quantity added: