Infineon IRFB31N20DPBF

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MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ohm; ID 31A; TO-220AB; PD 200W; VGS +/-30V
Manufacturer #: IRFB31N20DPBF
Allied Stock #: 70017529
RoHS Compliant


Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$2.45 (Each)
5 $2.45
10 $2.16
100 $1.88
500 $1.64
1000 $1.44

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Minimum Quantity: 5

Multiples Of: 5
Product Specifications
Product Attribute Attribute Value Search
Product Header Hexfet® Power MOSFET
Series HEXFET Series
Configuration Dual Drain
Dimensions 10.54 x 4.69 x 8.77 mm
Height 0.345" (8.77mm)
Length 0.414" (10.54mm)
Mounting Type Through Hole
Number of Pins 3
Package Type TO-220AB
Power Dissipation 200 W
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Resistance, Thermal, Junction to Case 0.75 °C/W
Time, Turn-Off Delay 26 ns
Time, Turn-On Delay 16 ns
Width 0.185" (4.69mm)
Capacitance, Input 2370 pF @ 25 V
Voltage, Drain to Source 200 V
Voltage, Gate to Source ±30 V
Channel Type N
Current, Drain 31 A
Polarization N-Channel
Resistance, Drain to Source On 0.082 Ω
Temperature Operating Range -55 to +175 °C
Forward Transconductance 17 S
Voltage, Breakdown, Drain to Source 200 V
Voltage, Forward, Diode 1.3 V
Gate Charge, Total 70 nC
Typical Gate Charge @ Vgs 70 nC @ 10 V
Number of Elements per Chip 1


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ohm; ID 31A; TO-220AB; PD 200W; VGS +/-30V
Allied Stock #: 70017529
Mfr's Part #: IRFB31N20DPBF
$2.450 Each
Quantity added: