Infineon IRF9540NSPBF

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MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; D2Pak; PD 140W; VGS +/-20V
Manufacturer #: IRF9540NSPBF
Allied Stock #: 70017195

RoHS Compliant Part



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$1.39 (Each)
750 $1.39

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Minimum Quantity: 750

Multiples Of: 750
Product Specifications
Product Attribute Attribute Value Search
Product Header Hexfet® Power MOSFET
Series HEXFET Series
Configuration Dual Drain
Dimensions 10.67 x 9.65 x 4.83 mm
Height 0.19" (4.83mm)
Length 0.42" (10.67mm)
Mounting Type Surface Mount
Number of Pins 3
Package Type D2PAK
Power Dissipation 110 W
Maximum Operating Temperature +150 °C
Minimum Operating Temperature -55 °C
Time, Turn-Off Delay 40 ns
Time, Turn-On Delay 13 ns
Width 0.38" (9.65mm)
Capacitance, Input 1450 pF @ -25 V
Voltage, Drain to Source -100 V
Voltage, Gate to Source ±20 V
Channel Type P
Current, Drain -23 A
Polarization P-Channel
Resistance, Drain to Source On 117 mΩ
Temperature Operating Range -55 to +150 °C
Forward Transconductance 5.6 sec
Voltage, Breakdown, Drain to Source -100 V
Voltage, Forward, Diode -1.6 V
Gate Charge, Total 97 nC
Typical Gate Charge @ Vgs 73 nC @ -10 V
Number of Elements per Chip 1


P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Product Added to Cart
MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; D2Pak; PD 140W; VGS +/-20V
Allied Stock #: 70017195
Mfr's Part #: IRF9540NSPBF
$1.390 Each
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