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MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
Manufacturer #: IRF530NSTRLPBF
Allied Stock #: 70017446

RoHS Compliant Part



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Standard Pricing
$0.99 (Each)
1 $0.99
10 $0.87
100 $0.76
500 $0.66
1000 $0.58

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Product Specifications
Product Attribute Attribute Value Search
Product Header Hexfet® Power MOSFET
Series HEXFET Series
Configuration Single
Dimensions 10.67 x 9.65 x 4.83 mm
Height 0.19" (4.83mm)
Length 0.42" (10.67mm)
Mounting Type Surface Mount
Number of Pins 3
Package Type D2PAK
Power Dissipation 70 W
Maximum Operating Temperature +175 °C
Minimum Operating Temperature -55 °C
Time, Turn-Off Delay 35 ns
Time, Turn-On Delay 9.2 ns
Width 0.38" (9.65mm)
Capacitance, Input 920 pF @ 25 V
Voltage, Drain to Source 100 V
Voltage, Gate to Source ±20 V
Channel Type N
Current, Drain 17 A
Polarization N-Channel
Resistance, Drain to Source On 90 mΩ
Temperature Operating Range -55 to +175 °C
Forward Transconductance 12 S
Voltage, Breakdown, Drain to Source 100 V
Voltage, Forward, Diode 1.3 V
Gate Charge, Total 37 nC
Typical Gate Charge @ Vgs Maximum of 37 nC @ 10 V
Number of Elements per Chip 1


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
Allied Stock #: 70017446
Mfr's Part #: IRF530NSTRLPBF
$0.990 Each
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