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ON Semiconductor BS170G

ON Semiconductor - BS170G - MOSFET;  N-Ch;  VDSS 90VDC;  RDS(ON) 1.8 Ohms;  ID 0.5A;  TO-92 (TO-226);  PD 350mW;  -55degc View larger image View larger image
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ON Semiconductor MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8 Ohms; ID 0.5A; TO-92 (TO-226); PD 350mW; -55degc
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Allied Stock#: 70099793

 RoHS Compliant Part


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Brand/Series: BS Series
Capacitance, Input: Maximum of 60 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 0.5 A
Dimensions: 4.45 x 3.18 x 4.32 mm
Height: 0.17" (4.32mm)
Length: 0.175" (4.45mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-92
Polarization: N-Channel
Power Dissipation: 350 mW
Resistance, Drain to Source On: 5 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 4 ns
Time, Turn-On Delay: 4 ns
Transconductance, Forward: 200 mS
Voltage, Breakdown, Drain to Source: 90 V
Voltage, Drain to Source: 90 V
Voltage, Gate to Source: ±20 V
Width: 0.125" <1/8> (3.2mm)