Location: 
All Products

NTE Electronics, Inc. NTE252

NTE Electronics, Inc. - NTE252 - TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2 View larger image View larger image
Image may be a representation.
See specs for product details.

NTE Electronics, Inc. TRANSISTOR PNP SILICON DARLINGTON 100V IC=20A TO-3 CASE POWER AMP COMP'L TO NTE2
Mfr. Part#:
NTE252

Allied Stock#: 70215983

 RoHS Compliant Part

 
View More from NTE Electronics, Inc. >>
Pricing (USD) & Availability
Standard Pricing
$9.65 (Each)
1$9.650
50$8.770
100$8.040
250$7.420
Availability

36 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: Transistor Series
Configuration: Common Base
Current, Collector: 20 A
Current, Gain: 100
Current, Output: 20 A
Diameter: 22.2 mm
Dimensions: 22.2 Dia. x 8.89 H mm
Height: 0.35" (8.89mm)
Input Voltage: 5 V
Material: Si
Mounting Type: Through Hole
Number of Elements per Chip: 2
Number of Pins: 3
Package Type: TO-3
Polarity: PNP
Power Dissipation: 160 W
Primary Type: Si
Resistance, Thermal, Junction to Case: 1.09 °C⁄W
Temperature Range, Junction, Operating: -65 to 200 °C
Temperature, Operating, Maximum: +200 °C
Temperature, Operating, Minimum: -65 °C
Temperature, Operating, Range: -65 to +200 °C
Transistor Polarity: PNP
Transistor Type: PNP
Type: Amplifier, Power
Voltage, Collector to Base: 100 V
Voltage, Collector to Emitter: 100 V
Voltage, Collector to Emitter, Saturation: 3 V
Voltage, Emitter to Base: 5 V
Voltage, Output: 100 V
Voltage, Saturation, Base to Emitter: 4 V
Voltage, Saturation, Collector to Emitter: 2 V
Voltage, Sustaining, Collector to Emitter: 100 V

Overview

Silicon Complementaryyy Transistors, Darlington Power Amplifier
  • Collector-emitter sustaining voltage: VCEO (sus) == 100 V Min
  • Monolithic construction with built-in base-emitter shunt resistors
    Designed for general-purpose amplifier and low-frequency switching applications.