Infineon IRLR7821PBF
MOSFET, Power,N-Ch,VDSS 30V,RDS(ON) 7.5 Milliohms,ID 65A,D-Pak (TO-252AA),PD 75W
Mfr. Part #: IRLR7821PBF / RS Stock #: 70017114
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Product Specifications
Product Attribute
Attribute Value
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Channel Type
N
Configuration
Single
Dimensions
0.09 in H X 0.00 in W X 0.26 in L
Drain Current
65 Amp
Drain to Source On Resistance
12.5 mOhms
Drain to Source Voltage
30 V
Forward Transconductance
46 sec
Forward Voltage, Diode
1 V
Gate to Source Voltage
20 V
Input Capacitance
1030 pF @ 15 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
N-Channel
Power Dissipation
75 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
10 nC
Turn Off Delay Time
10 ns
Turn On Delay Time
11 ns
Typical Gate Charge @ Vgs
10 nC @ 4.5 V
Voltage, Breakdown, Drain to Source
30 V
Overview
N-Channel Power MOSFET 60A to 79A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
