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International Rectifier IRLR7807ZPBF

International Rectifier - IRLR7807ZPBF - MOSFET,  N Ch.,  30V,  43A,  13.8 MOHM,  7 NC QG,  D-PAK,  Pb-Free View larger image View larger image
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International Rectifier MOSFET, N Ch., 30V, 43A, 13.8 MOHM, 7 NC QG, D-PAK, Pb-Free
Mfr. Part#:

Allied Stock#: 70018004

 RoHS Compliant Part



View IRLR7807ZPBF Datasheet Datasheet

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Pricing (USD) & Availability
Special Pricing
$0.267 (Each)
1$0.267(Save 76%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.12 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 780 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 43 A
Dimensions: 6.73 x 6.22 x 2.26 mm
Height: 0.089" (2.26mm)
Length: 0.264" (6.73mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: DPAK
Power Dissipation: 40 W
Resistance, Drain to Source On: 18.2
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 9.8 ns
Time, Turn-On Delay: 7.1 ns
Transconductance, Forward: 51 S
Typical Gate Charge @ Vgs: 7 nC @ 4.5 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.245" (6.22mm)


N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.