Infineon IRLR024NPBF
MOSFET, Power,N-Ch,VDSS 55V,RDS(ON) 0.065Ohm,ID 17A,D-Pak (TO-252AA),PD 45W
Mfr. Part #: IRLR024NPBF / RS Stock #: 70017110
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
1650
$0.85
3300
$0.75
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Dual Drain
Drain Current
17 A
Drain to Source On Resistance
0.11 Ω
Drain to Source Voltage
55 V
Forward Transconductance
8.3 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±16 V
Input Capacitance
480 pF @ 25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
3
Package Type
DPAK
Polarization
N-Channel
Power Dissipation
45 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
15 nC
Turn Off Delay Time
20 ns
Turn On Delay Time
7.1 ns
Typical Gate Charge @ Vgs
Maximum of 15 nC @ 5 V
Voltage, Breakdown, Drain to Source
55 V
Overview
N-Channel Power MOSFET 13A to 19A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.