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International Rectifier IRFL4105PBF

International Rectifier - IRFL4105PBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 0.045Ohm;  ID 3.7A;  SOT-223;  PD 1W;  VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 0.045Ohm; ID 3.7A; SOT-223; PD 1W; VGS +/-20V
Mfr. Part#:
IRFL4105PBF

Allied Stock#: 70017599

 RoHS Compliant Part

 
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  • This item may not be backordered online. Maximum order amount is 103.
Pricing (USD) & Availability
Standard Pricing
$1.01 (Each)
1$1.010
10$0.450
100$0.340
1000$0.320
2500$0.290
10000$0.280
25000$0.270
Availability

103 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 660 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 5.2 A
Dimensions: 6.70 x 3.70 x 1.45 mm
Gate Charge, Total: 23 nC
Height: 0.057" (1.45mm)
Length: 0.263" (6.7mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: SOT-223
Polarization: N-Channel
Power Dissipation: 2.1 W
Resistance, Drain to Source On: 0.045 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 19 ns
Time, Turn-On Delay: 7.1 ns
Transconductance, Forward: 3.8 S
Typical Gate Charge @ Vgs: 23 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.146" (3.7mm)

Overview

N-Channel Power MOSFET up to 7A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
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