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International Rectifier IRFB4310ZPBF

International Rectifier - IRFB4310ZPBF - MOSFET,  Power;  N-Ch;  VDSS 100V;  RDS(ON) 4.8 Milliohms;  ID 120A;  TO-220AB;  PD 250W View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 4.8 Milliohms; ID 120A; TO-220AB; PD 250W
Mfr. Part#:
IRFB4310ZPBF

Allied Stock#: 70017874

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$1.54 (Each)
1$1.536(Save 55%)
2500$1.520(Save 55%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$3.41 (Each)
1$3.410
10$1.960
100$1.850
250$1.740
500$1.670
1000$1.600
2500$1.520
Availability

12 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 6860 pF @ 50 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 127 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Gate Charge, Total: 120 nC
Height: 0.355" (9.02mm)
Length: 0.42" (10.67mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 250 W
Resistance, Drain to Source On: 6
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 55 ns
Time, Turn-On Delay: 20 ns
Transconductance, Forward: 150 S
Typical Gate Charge @ Vgs: 85 nC @ 10 V
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.