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International Rectifier IRFB4110PBF

International Rectifier - IRFB4110PBF - MOSFET,  Power;  N-Ch;  VDSS 100V;  RDS(ON) 3.7 Milliohms;  ID 180A;  TO-220AB;  PD 370W View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 100V; RDS(ON) 3.7 Milliohms; ID 180A; TO-220AB; PD 370W
Mfr. Part#:

Allied Stock#: 70017158

 RoHS Compliant Part

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Pricing (USD) & Availability
Special Pricing
$2.09 (Each)
1$2.095(Save 29%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.93 (Each)

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Brand/Series: HEXFET Series
Capacitance, Input: 9620 pF @ 50 V
Channel Mode: Enhancement
Channel Type: N
Gate Charge, Total: 150 nC
Height: 0.65" (16.51mm)
Length: 10.67
Package Type: TO-220AB
Polarization: N-Channel
Resistance, Drain to Source On: 4.5
Temperature, Operating, Maximum: +175
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 78 ns
Time, Turn-On Delay: 25 ns
Transconductance, Forward: 160 S
Voltage, Breakdown, Drain to Source: 100 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)


"The new IRFB4110 75V MOSFETs are designed to shrink circuit size and increase power density in high power server AC-DC switch-mode power supplies (SMPS) with 12V output or in 48V rail ORing circuits. The new 100V devices suit high power flyback secondary rectification or offer enhanced primary-side efficiency in high power telecom isolated 48V DC-DC converters. In addition, the new MOSFETs can be used in stepper motor and brushless DC motor drive applications.

The IRFB4110PbF is a 100V MOSFET with 4.0mOhm maximum device on-resistance, and can slash component count in half, reducing PCB area and reducing heat sink size. "
  • High Efficiency Synchronous Rectification in SMPS
  • Uninterruptible Power Supply
  • High Speed Power Switching
  • Hard Switched and High Frequency Circuits

  • Improved Gate, Avalanche and Dynamic dv/dt Ruggedness
  • Fully Characterized Capacitance and Avalanche SOA
  • Enhanced body diode dV/dt and dI/dt Capability"
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