Infineon IRF7495PBF
MOSFET, Power,N-Ch,VDSS 100V,RDS(ON) 18 Milliohms,ID 7.3A,SO-8,PD 2.5W,VGS+/-20V
Mfr. Part #: IRF7495PBF / RS Stock #: 70017520
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
3800
$1.23
7600
$1.08
11400
$0.95
15200
$0.82
19000
$0.72
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
Search
Channel Type
N
Configuration
Quad Drain, Triple Source
Drain Current
7.3 A
Drain to Source On Resistance
22 mΩ
Drain to Source Voltage
100 V
Forward Transconductance
11 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
±20 V
Input Capacitance
1530 pF @ 25 V pF
Maximum Operating Temperature
150 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Number of Elements per Chip
1
Number of Pins
8
Package Type
SO-8
Polarization
N-Channel
Power Dissipation
2.5 W
Product Header
Hexfet® Power MOSFET
Series
HEXFET Series
Temperature Operating Range
-55 to +150 °C
Total Gate Charge
34 nC
Turn Off Delay Time
10 ns
Turn On Delay Time
8.7 ns
Typical Gate Charge @ Vgs
34 nC @ 10 V
Voltage, Breakdown, Drain to Source
100 V
Overview
HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.