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International Rectifier IRF7311TRPBF

International Rectifier - IRF7311TRPBF - MOSFET,  Power;  Dual N-Ch;  VDSS 20V;  RDS(ON) 0.023Ohm;  ID 6.6A;  SO-8;  PD 2W;  VGS +/-12V View larger image View larger image
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International Rectifier MOSFET, Power; Dual N-Ch; VDSS 20V; RDS(ON) 0.023Ohm; ID 6.6A; SO-8; PD 2W; VGS +/-12V
Mfr. Part#:
IRF7311TRPBF

Allied Stock#: 70017448

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.374 (Each)
1$0.374(Save 67%)
8000$0.370(Save 67%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.13 (Each)
1$1.130
10$0.570
100$0.480
500$0.450
1000$0.420
4000$0.390
8000$0.370
Availability

3096 can ship immediately.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 900 pF @ 15 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 6.6 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 18 nC
Height: 0.059" (1.5mm)
Length: 0.196" (5mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: Dual N-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.046 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 38 ns
Time, Turn-On Delay: 8.1 ns
Transconductance, Forward: 20 S
Typical Gate Charge @ Vgs: 18 nC @ 4.5 V
Voltage, Breakdown, Drain to Source: 20 V
Voltage, Drain to Source: 20 V
Voltage, Forward, Diode: 0.72 V
Voltage, Gate to Source: ±12 V
Width: 0.157" (4mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.