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International Rectifier IRF7303PBF

International Rectifier - IRF7303PBF - IRF7303PBF Dual N-channel MOSFET Transistor,  4.9 A,  30 V,  8-Pin SOIC View larger image View larger image
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International Rectifier IRF7303PBF Dual N-channel MOSFET Transistor, 4.9 A, 30 V, 8-Pin SOIC
Mfr. Part#:

Allied Stock#: 70016982

 RoHS Compliant Part

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Pricing (USD) & Availability
Special Pricing
$0.323 (Each)
1$0.323(Save 70%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$1.08 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 520 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Dual Drain
Current, Drain: 4.9 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 25 nC
Height: 0.059" (1.5mm)
Length: 0.196" (5mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 2
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2 W
Resistance, Drain to Source On: 0.08 Ω
Temperature, Operating: -55 to 150 °C
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 62.5 °C/W
Time, Turn-Off Delay: 22 ns
Time, Turn-On Delay: 6.8 ns
Transconductance, Forward: 5.2 S
Typical Gate Charge @ Vgs: Maximum of 25 nC @ 10 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)


  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dual N-Channel MOSFET
  • Surface Mount
  • Available in Tape and reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free

  • *Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.