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International Rectifier IRF7201PBF

International Rectifier - IRF7201PBF - MOSFET,  Power;  N-Ch;  VDSS 30V;  RDS(ON) 0.03Ohm;  ID 7.3A;  SO-8;  PD 2.5W;  VGS +/-20V;  -55d View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 30V; RDS(ON) 0.03Ohm; ID 7.3A; SO-8; PD 2.5W; VGS +/-20V; -55d
Mfr. Part#:
IRF7201PBF

Allied Stock#: 70016978

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.243 (Each)
1$0.243(Save 74%)
25000$0.240(Save 74%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$0.920 (Each)
1$0.920
10$0.410
100$0.310
1000$0.290
2500$0.260
10000$0.250
25000$0.240
Availability

179 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: HEXFET Series
Capacitance, Input: 550 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Quad Drain, Triple Source
Current, Drain: 7.3 A
Dimensions: 5.00 x 4.00 x 1.50 mm
Gate Charge, Total: 19 nC
Height: 0.059" (1.5mm)
Length: 0.196" (5mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 8
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.5 W
Resistance, Drain to Source On: 0.05
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 21 ns
Time, Turn-On Delay: 7 ns
Transconductance, Forward: 5.8 S
Typical Gate Charge @ Vgs: 19 nC @ 10 V
Voltage, Breakdown, Drain to Source: 30 V
Voltage, Drain to Source: 30 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±20 V
Width: 0.157" (4mm)

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.