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International Rectifier IRF640NSTRLPBF

International Rectifier - IRF640NSTRLPBF - MOSFET,  Power;  N-Ch;  VDSS 200V;  RDS(ON) 0.15Ohm;  ID 18A;  D2Pak;  PD 150W;  VGS +/-20V;  -55 View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 0.15Ohm; ID 18A; D2Pak; PD 150W; VGS +/-20V; -55
Mfr. Part#:

Allied Stock#: 70017430

 RoHS Compliant Part

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Pricing (USD) & Availability
Special Pricing
$0.880 (Each)
1$0.880(Save 59%)
2400$0.869(Save 59%)
4800$0.827(Save 61%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.13 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 1160 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 18 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 67 nC
Height: 0.19" (4.83mm)
Length: 0.42" (10.67mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 150 W
Resistance, Drain to Source On: 0.15 Ω
Resistance, Thermal, Junction to Case: 1 °C/W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 23 ns
Time, Turn-On Delay: 10 ns
Transconductance, Forward: 6.8 S
Typical Gate Charge @ Vgs: Maximum of 67 nC @ 10 V
Voltage, Breakdown, Drain to Source: 200 V
Voltage, Drain to Source: 200 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

*Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.