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International Rectifier IRF3415SPBF

International Rectifier - IRF3415SPBF - MOSFET,  Power;  N-Ch;  VDSS 150V;  RDS(ON) 0.042Ohm;  ID 43A;  D2Pak;  PD 200W;  VGS +/-20V View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 150V; RDS(ON) 0.042Ohm; ID 43A; D2Pak; PD 200W; VGS +/-20V
Mfr. Part#:

Allied Stock#: 70017481

 RoHS Compliant Part

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  • This item may not be backordered online. Maximum order amount is 65.
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$3.05 (Each)

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Minimum Quantity: 1 |  Multiples Of: 1


Brand/Series: HEXFET Series
Capacitance, Input: 2400 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 43 A
Dimensions: 10.67 x 9.65 x 4.83 mm
Gate Charge, Total: 200 nC
Height: 0.19" (4.83mm)
Length: 0.42" (10.67mm)
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: D2PAK
Polarization: N-Channel
Power Dissipation: 200 W
Resistance, Drain to Source On: 0.042 Ω
Resistance, Thermal, Junction to Case: 0.75 °C/W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Time, Turn-Off Delay: 71 ns
Time, Turn-On Delay: 12 ns
Transconductance, Forward: 19 S
Typical Gate Charge @ Vgs: Maximum of 200 nC @ 10 V
Voltage, Breakdown, Drain to Source: 150 V
Voltage, Drain to Source: 150 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.38" (9.65mm)


N-Channel Power MOSFET 40A to 49A, Infineon
The Infineon range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.