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International Rectifier IRF3205ZPBF

International Rectifier - IRF3205ZPBF - MOSFET,  Power;  N-Ch;  VDSS 55V;  RDS(ON) 4.9Milliohms;  ID 110A;  TO-220AB;  PD 170W;  -55de View larger image View larger image
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International Rectifier MOSFET, Power; N-Ch; VDSS 55V; RDS(ON) 4.9Milliohms; ID 110A; TO-220AB; PD 170W; -55de
Mfr. Part#:
IRF3205ZPBF

Allied Stock#: 70016921

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Special Pricing
$0.941 (Each)
1$0.941(Save 65%)
Excess Inventory, Discount available online only. Restrictions apply*
Standard Pricing
$2.68 (Each)
1$2.683
10$1.427
100$1.256
500$1.182
1000$1.128
2500$1.086
5000$1.043
Availability

1474 can ship immediately.

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Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Application: For automotive applications
Brand/Series: HEXFET Series
Capacitance, Input: 3450 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 110 A
Dimensions: 10.67 x 4.83 x 9.02 mm
Fall Time: 67 ns (Typ.)
Gate Charge, Total: 76 nC
Height: 0.355" (9.02mm)
Length: 0.42" (10.67mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to +175 °C (Max.)
Package Type: TO-220AB
Polarization: N-Channel
Power Dissipation: 170 W
Resistance, Drain to Source On: 6.5
Resistance, Thermal, Junction to Case: 0.90 °C⁄W (Max.)
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Thermal Resistance, Junction to Ambient: 62 °C⁄W
Time, Turn-Off Delay: 45 ns
Time, Turn-On Delay: 18 ns
Transconductance, Forward: 71 S
Typical Gate Charge @ Vgs: 76 nC @ 10 V
Voltage, Breakdown, Drain to Source: 55 V
Voltage, Drain to Source: 55 V
Voltage, Forward, Diode: 1.3 V
Voltage, Gate to Source: ±20 V
Width: 0.19" (4.83mm)

Overview

Power MOSFET, Pulsed Drain Current 440 A, Input Capacitance 3450 pF
  • Advanced process technology
  • Ultra low on-resistance
  • 150 °C operating temperature
  • Fast switching
  • Repetitive avalanche allowed up to Tjmax
  • Lead-free
    Specifically designed for automotive applications, this HEXFET® power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175 °C junction operating temperature

  • *Discount only applies to the first price-break quantity. Discount offered online only. Discounts cannot be combined with any other offers, promotions or contract pricing. Price applies to in-stock purchases only.