Infineon IRLU3705ZPBF

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MOSFET; N Ch.; Automotive; 55V; 89A; 8 MOHM; 44 NC QG; I-PAK; Pb-Free
Mfr. Part#: IRLU3705ZPBF
Allied Stock#: 70017965

RoHS Compliant Part

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Minimum Quantity: 450

Multiples Of: 75

Specifications

Capacitance, Input : 2900 pF @ 25 V
Channel Type : N
Configuration : Single
Current, Drain : 89 A
Dimensions : 6.73 x 2.39 x 6.22 mm
Height : 0.245" (6.22mm)
Length : 0.264" (6.73mm)
Mounting Type : Through Hole
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : I-PAK
Power Dissipation : 130 W
Resistance, Drain to Source On : 8 mΩ
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 33 ns
Time, Turn-On Delay : 17 ns
Transconductance, Forward : 89 S
Typical Gate Charge @ Vgs : 44 nC @ 5 V
Voltage, Drain to Source : 55 V
Voltage, Forward, Diode : 1.3 V
Voltage, Gate to Source : ±16 V
Width : 0.094" (2.39mm)

Overview

N-Channel Power MOSFET 80A to 99A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Product Added to Cart
Infineon
MOSFET; N Ch.; Automotive; 55V; 89A; 8 MOHM; 44 NC QG; I-PAK; Pb-Free
Allied Stock #: 70017965
Mfr's Part #: IRLU3705ZPBF
$2.350 Each
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