Infineon IRLR2905TRLPBF

Image may be a representation.
See specs for product details.
MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ohm; ID 42A; D-Pak (TO-252AA); PD 110W
Mfr. Part#: IRLR2905TRLPBF
Allied Stock#: 70017835

RoHS Compliant Part

Resources

Datasheet Datasheet

  • Traceability data (i.e., Date Code, Lot Code) for this item is currently unavailable.
Pricing (USD) & Availability
Standard Pricing
Product Discontinued
Availability

0 can ship immediately.

Request Lead Time

Minimum Quantity: 3000

Multiples Of: 3000

Specifications

Capacitance, Input : 1700 pF @ 25 V
Channel Type : N
Configuration : Dual Drain
Current, Drain : 42 A
Dimensions : 6.73 x 6.22 x 2.39 mm
Gate Charge, Total : 48 nC
Height : 0.094" (2.39mm)
Length : 0.264" (6.73mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : DPAK
Polarization : N-Channel
Power Dissipation : 110 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 0.04 Ω
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 26 ns
Time, Turn-On Delay : 11 ns
Transconductance, Forward : 21 S
Typical Gate Charge @ Vgs : Maximum of 48 nC @ 4.5 V
Voltage, Breakdown, Drain to Source : 55 V
Voltage, Drain to Source : 55 V
Voltage, Forward, Diode : 1.3 V
Voltage, Gate to Source : ±16 V
Width : 0.245" (6.22mm)
Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.027Ohm; ID 42A; D-Pak (TO-252AA); PD 110W
Allied Stock #: 70017835
Mfr's Part #: IRLR2905TRLPBF
$1.710 Each
Quantity added: