Infineon IRLL024NTRPBF

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MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
Mfr. Part#: IRLL024NTRPBF
Allied Stock#: 70017816

RoHS Compliant Part

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Pricing (USD) & Availability
Standard Pricing
$0.558 (Each)
2500 $0.558
Availability

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Minimum Quantity: 2500

Multiples Of: 2500

Specifications

Capacitance, Input : 510 pF @ 25 V
Channel Type : N
Configuration : Single
Current, Drain : 4.4 A
Dimensions : 6.70 x 3.70 x 1.45 mm
Gate Charge, Total : 10.4 nC
Height : 0.057" (1.45mm)
Length : 0.263" (6.7mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : SOT-223
Polarization : N-Channel
Power Dissipation : 2.1 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 0.1 Ω
Series : HEXFET Series
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +150 °C
Time, Turn-Off Delay : 18 ns
Time, Turn-On Delay : 7.4 ns
Transconductance, Forward : 3.3 S
Typical Gate Charge @ Vgs : 10.4 nC @ 5 V
Voltage, Breakdown, Drain to Source : 55 V
Voltage, Drain to Source : 55 V
Voltage, Forward, Diode : 1 V
Voltage, Gate to Source : ±16 V
Width : 0.146" (3.7mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 55V; RDS(ON) 0.065Ohm; ID 4.4A; SOT-223; PD 2.1W; VGS +/-16V
Allied Stock #: 70017816
Mfr's Part #: IRLL024NTRPBF
$0.558 Each
Quantity added: