Infineon IRL3713STRRPBF

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MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 2.6 Milliohms; ID 260A; D2Pak; PD 330W; VGS +/-2
Mfr. Part#: IRL3713STRRPBF
Allied Stock#: 70017811

RoHS Compliant Part

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Specifications

Capacitance, Input : 5890 pF @ 15 V
Channel Type : N
Configuration : Dual Drain
Current, Drain : 260 A
Dimensions : 10.67 x 9.65 x 4.83 mm
Gate Charge, Total : 75 nC
Height : 0.19" (4.83mm)
Length : 0.42" (10.67mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : D2PAK
Polarization : N-Channel
Power Dissipation : 330 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 4 mΩ
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 40 ns
Time, Turn-On Delay : 16 ns
Transconductance, Forward : 76 S
Typical Gate Charge @ Vgs : 75 nC @ 4.5 V
Voltage, Breakdown, Drain to Source : 30 V
Voltage, Drain to Source : 30 V
Voltage, Forward, Diode : 0.8 V
Voltage, Gate to Source : ±20 V
Width : 0.38" (9.65mm)
Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 30V; RDS(ON) 2.6 Milliohms; ID 260A; D2Pak; PD 330W; VGS +/-2
Allied Stock #: 70017811
Mfr's Part #: IRL3713STRRPBF
$1.760 Each
Quantity added: