Infineon IRFB4103PBF

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MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 139 Milliohms; ID 17A; TO-220AB; PD 140W; -55de
Mfr. Part#: IRFB4103PBF
Allied Stock#: 70017266

RoHS Compliant Part

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Specifications

Current, Drain : 17 A
Gate Charge, Total : 25 nC
Package Type : TO-220AB
Polarization : N-Channel
Power Dissipation : 140 W
Product Header : Digital Audio MOSFET
Resistance, Drain to Source On : 139 Milliohms
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Time, Turn-Off Delay : 16 ns
Time, Turn-On Delay : 9.6 ns
Transconductance, Forward : 7.1 S
Voltage, Breakdown, Drain to Source : 200 V
Voltage, Forward, Diode : 1.7 V
Voltage, Gate to Source : ±30 V
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Infineon
MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 139 Milliohms; ID 17A; TO-220AB; PD 140W; -55de
Allied Stock #: 70017266
Mfr's Part #: IRFB4103PBF
$1.350 Each
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