Infineon IRFB31N20DPBF

Image may be a representation.
See specs for product details.
MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ohm; ID 31A; TO-220AB; PD 200W; VGS +/-30V
Mfr. Part#: IRFB31N20DPBF
Allied Stock#: 70017529

RoHS Compliant Part

Quantity  

Resources

Datasheet Datasheet

  • Traceability data (i.e., Date Code, Lot Code) for this item is currently unavailable.
Pricing (USD) & Availability
Standard Pricing
$4.250 (Each)
5 $4.250
10 $3.750
100 $3.270
500 $2.840
1000 $2.500
Availability

0 can ship immediately.

Request Lead Time

Minimum Quantity: 5

Multiples Of: 5

Specifications

Capacitance, Input : 2370 pF @ 25 V
Channel Type : N
Configuration : Dual Drain
Current, Drain : 31 A
Dimensions : 10.54 x 4.69 x 8.77 mm
Gate Charge, Total : 70 nC
Height : 0.345" (8.77mm)
Length : 0.414" (10.54mm)
Mounting Type : Through Hole
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : TO-220AB
Polarization : N-Channel
Power Dissipation : 200 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 0.082 Ω
Resistance, Thermal, Junction to Case : 0.75 °C/W
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 26 ns
Time, Turn-On Delay : 16 ns
Transconductance, Forward : 17 S
Typical Gate Charge @ Vgs : 70 nC @ 10 V
Voltage, Breakdown, Drain to Source : 200 V
Voltage, Drain to Source : 200 V
Voltage, Forward, Diode : 1.3 V
Voltage, Gate to Source : ±30 V
Width : 0.185" (4.69mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 0.082Ohm; ID 31A; TO-220AB; PD 200W; VGS +/-30V
Allied Stock #: 70017529
Mfr's Part #: IRFB31N20DPBF
$4.250 Each
Quantity added: