Infineon IRF9Z34NSPBF

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MOSFET; Power; P-Ch; VDSS -55V; RDS(ON) 0.1Ohm; ID -19A; D2Pak; PD 68W; VGS +/-20V; -55d
Mfr. Part#: IRF9Z34NSPBF
Allied Stock#: 70017190

RoHS Compliant Part

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Pricing (USD) & Availability
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$1.867 (Each)
950 $1.867
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Minimum Quantity: 950

Multiples Of: 950

Specifications

Capacitance, Input : 280 pF @ -25 V
Channel Type : P
Configuration : Dual Drain
Current, Drain : -19 A
Dimensions : 10.67 x 9.65 x 4.83 mm
Gate Charge, Total : 35 nC
Height : 0.19" (4.83mm)
Length : 0.42" (10.67mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : D2PAK
Polarization : P-Channel
Power Dissipation : 68 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 0.1 Ω
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 30 ns
Time, Turn-On Delay : 13 ns
Transconductance, Forward : 4.2 sec
Typical Gate Charge @ Vgs : Maximum of 35 nC @ -10 V
Voltage, Breakdown, Drain to Source : -55 V
Voltage, Drain to Source : -55 V
Voltage, Forward, Diode : -1.6 V
Voltage, Gate to Source : ±20 V
Width : 0.38" (9.65mm)
Product Added to Cart
Infineon
MOSFET; Power; P-Ch; VDSS -55V; RDS(ON) 0.1Ohm; ID -19A; D2Pak; PD 68W; VGS +/-20V; -55d
Allied Stock #: 70017190
Mfr's Part #: IRF9Z34NSPBF
$1.867 Each
Quantity added: