Infineon IRF9540NSPBF

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MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; D2Pak; PD 140W; VGS +/-20V
Mfr. Part#: IRF9540NSPBF
Allied Stock#: 70017195

RoHS Compliant Part

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Pricing (USD) & Availability
Standard Pricing
$2.638 (Each)
750 $2.638
Availability

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Minimum Quantity: 750

Multiples Of: 750

Specifications

Capacitance, Input : 1450 pF @ -25 V
Channel Type : P
Configuration : Dual Drain
Current, Drain : -23 A
Dimensions : 10.67 x 9.65 x 4.83 mm
Gate Charge, Total : 97 nC
Height : 0.19" (4.83mm)
Length : 0.42" (10.67mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : D2PAK
Polarization : P-Channel
Power Dissipation : 110 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 117 mΩ
Series : HEXFET Series
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +150 °C
Time, Turn-Off Delay : 40 ns
Time, Turn-On Delay : 13 ns
Transconductance, Forward : 5.6 sec
Typical Gate Charge @ Vgs : 73 nC @ -10 V
Voltage, Breakdown, Drain to Source : -100 V
Voltage, Drain to Source : -100 V
Voltage, Forward, Diode : -1.6 V
Voltage, Gate to Source : ±20 V
Width : 0.38" (9.65mm)

Overview

P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

Product Added to Cart
Infineon
MOSFET; Power; P-Ch; VDSS -100V; RDS(ON) 0.117Ohm; ID -23A; D2Pak; PD 140W; VGS +/-20V
Allied Stock #: 70017195
Mfr's Part #: IRF9540NSPBF
$2.638 Each
Quantity added: