Infineon IRF7468PBF

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MOSFET; Power; N-Ch; VDSS 40V; RDS(ON) 11.7 Milliohms; ID 9.4A; SO-8; PD 2.5W; VGS +/-1
Mfr. Part#: IRF7468PBF
Allied Stock#: 70017528

RoHS Compliant Part

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Specifications

Capacitance, Input : 2460 pF @ 20 V
Channel Type : N
Configuration : Quad Drain, Triple Source
Current, Drain : 9.4 A
Dimensions : 5.00 x 4.00 x 1.50 mm
Gate Charge, Total : 23 nC
Height : 0.059" (1.5mm)
Length : 0.196" (5mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 8
Package Type : SO-8
Polarization : N-Channel
Power Dissipation : 2.5 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 35 mΩ
Series : HEXFET Series
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +150 °C
Time, Turn-Off Delay : 20 ns
Time, Turn-On Delay : 7.6 ns
Transconductance, Forward : 27 S
Typical Gate Charge @ Vgs : 23 nC @ 4.5 V
Voltage, Breakdown, Drain to Source : 40 V
Voltage, Drain to Source : 40 V
Voltage, Forward, Diode : 0.81 V
Voltage, Gate to Source : ±12 V
Width : 0.157" (4mm)
Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 40V; RDS(ON) 11.7 Milliohms; ID 9.4A; SO-8; PD 2.5W; VGS +/-1
Allied Stock #: 70017528
Mfr's Part #: IRF7468PBF
$1.130 Each
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