Infineon IRF7306PBF

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MOSFET; Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.1Ohm; ID -3.6A; SO-8; PD 2W; VGS +/-20V
Mfr. Part#: IRF7306PBF
Allied Stock#: 70017577

RoHS Compliant Part

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$0.960 (Each)
1 $0.960
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Specifications

Channel Type : P
Current, Drain : -3.6 A
Gate Charge, Total : 25 nC
Package Type : SO-8
Polarization : Dual P-Channel
Power Dissipation : 2 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 0.1 Ohm
Series : HEXFET Series
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Time, Turn-Off Delay : 25 ns
Time, Turn-On Delay : 11 ns
Transconductance, Forward : 2.5 S
Voltage, Breakdown, Drain to Source : -30 V
Voltage, Drain to Source : -30 V
Voltage, Forward, Diode : -1 V
Voltage, Gate to Source : ±20 V
Product Added to Cart
Infineon
MOSFET; Power; Dual P-Ch; VDSS -30V; RDS(ON) 0.1Ohm; ID -3.6A; SO-8; PD 2W; VGS +/-20V
Allied Stock #: 70017577
Mfr's Part #: IRF7306PBF
$0.960 Each
Quantity added: