Infineon IRF7101PBF

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IRF7101PBF Dual N-channel MOSFET Transistor; 3.5 A; 20 V; 8-Pin SOIC
Mfr. Part#: IRF7101PBF
Allied Stock#: 70016974

RoHS Compliant Part

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Specifications

Capacitance, Input : 320 pF @ 15V
Channel Type : N
Configuration : Dual Source, Quad Drain
Current, Drain : 3.5 A
Dimensions : 5.00 x 4.00 x 1.50 mm
Gate Charge, Total : 15 nC
Height : 0.059" (1.5mm)
Length : 0.196" (5mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 2
Number of Pins : 8
Package Type : SO-8
Polarization : N-Channel
Power Dissipation : 2 W
Resistance, Drain to Source On : 0.15 Ω
Series : HEXFET Series
Temperature, Operating : -55 to 150 °C
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +150 °C
Thermal Resistance, Junction to Ambient : 62.5 °C/W
Time, Turn-Off Delay : 24 ns
Time, Turn-On Delay : 7 ns
Transconductance, Forward : 1.1 S
Typical Gate Charge @ Vgs : Maximum of 15 nC @ 10 V
Voltage, Breakdown, Drain to Source : 20 V
Voltage, Drain to Source : 20 V
Voltage, Forward, Diode : 1.2 V
Voltage, Gate to Source : ±12 V
Width : 0.157" (4mm)

Overview

  • Advanced Process Technology
  • Ultra Low On-Resistance
  • Dual N-Channel MOSFET
  • Surface Mount
  • Available in Tape and reel
  • Dynamic dv/dt Rating
  • Fast Switching
  • Lead-Free

  • Product Added to Cart
    Infineon
    IRF7101PBF Dual N-channel MOSFET Transistor; 3.5 A; 20 V; 8-Pin SOIC
    Allied Stock #: 70016974
    Mfr's Part #: IRF7101PBF
    $0.683 Each
    Quantity added: