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|Capacitance, Input||:||1510 pF @ 13 V|
|Configuration||:||Dual Drain, Dual Source|
|Current, Drain||:||68 A|
|Dimensions||:||4.85 x 3.95 x 0.506 mm|
|Mounting Type||:||Surface Mount|
|Number of Elements per Chip||:||1|
|Number of Pins||:||5|
|Package Type||:||DirectFET SQ|
|Power Dissipation||:||36 W|
|Resistance, Drain to Source On||:||8.7 mΩ|
|Temperature, Operating, Maximum||:||+150 °C|
|Temperature, Operating, Minimum||:||-40 °C|
|Temperature, Operating, Range||:||-40 to +150 °C|
|Time, Turn-Off Delay||:||14 ns|
|Time, Turn-On Delay||:||11 ns|
|Transconductance, Forward||:||40 S|
|Typical Gate Charge @ Vgs||:||12 nC @ 4.5 V|
|Voltage, Drain to Source||:||25 V|
|Voltage, Forward, Diode||:||1 V|
|Voltage, Gate to Source||:||±20 V|
The IRF6712SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET™ packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package
allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6712SPbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6712SPbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including Rds(on) and gate charge to minimize losses.