Infineon IRF530NSTRLPBF

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MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
Mfr. Part#: IRF530NSTRLPBF
Allied Stock#: 70017446

RoHS Compliant Part

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Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$1.910 (Each)
1 $1.910
10 $1.680
100 $1.470
500 $1.270
1000 $1.120
Availability

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Minimum Quantity: 1

Multiples Of: 1

Specifications

Capacitance, Input : 920 pF @ 25 V
Channel Type : N
Configuration : Single
Current, Drain : 17 A
Dimensions : 10.67 x 9.65 x 4.83 mm
Gate Charge, Total : 37 nC
Height : 0.19" (4.83mm)
Length : 0.42" (10.67mm)
Mounting Type : Surface Mount
Number of Elements per Chip : 1
Number of Pins : 3
Package Type : D2PAK
Polarization : N-Channel
Power Dissipation : 70 W
Product Header : Hexfet® Power MOSFET
Resistance, Drain to Source On : 90 mΩ
Series : HEXFET Series
Temperature, Operating, Maximum : +175 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +175 °C
Time, Turn-Off Delay : 35 ns
Time, Turn-On Delay : 9.2 ns
Transconductance, Forward : 12 S
Typical Gate Charge @ Vgs : Maximum of 37 nC @ 10 V
Voltage, Breakdown, Drain to Source : 100 V
Voltage, Drain to Source : 100 V
Voltage, Forward, Diode : 1.3 V
Voltage, Gate to Source : ±20 V
Width : 0.38" (9.65mm)

Overview

HEXFET® N-Channel Power MOSFET up to 50A, Infineon
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

Product Added to Cart
Infineon
MOSFET; Power; N-Ch; VDSS 100V; RDS(ON) 90Milliohms; ID 17A; D2Pak; PD 70W; VGS +/-20V
Allied Stock #: 70017446
Mfr's Part #: IRF530NSTRLPBF
$1.910 Each
Quantity added: