General Semiconductor / Vishay S1D-E3/61T
DIODE GEN PURP 200V 1A DO214AC
Mfr. Part #: S1D-E3/61T / RS Stock #: 70217264
Image may be a representation. See specs for product details.
Price
Qty.
Standard Price
7200
$0.07774
14400
$0.07385
21600
$0.06996
28800
$0.06608
Additional Inventory
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Configuration
Single
Continuous Forward Current
1 A
Dimensions
0.082\” (2.087mm) X 0.00 in W X 0.18 in L
Diode Type
Glass Passivated Rectifier
Forward Voltage
1.1 V
Junction Capacitance
12 pF
Maximum Junction Temperature
+150 °C
Maximum Operating Temperature
150 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Surface Mount
Non Repetitive On State Peak Current
40 A
Number of Pins
2
Operating Temperature
-55 to 150 °C
Package Type
DO-214AC
Peak Current
50 μA A
Primary Type
Rectifier
Product Header
Surface Mount Glass Passivated Rectifier
Recovery Time
1.8 μs
Repetitive Peak Voltage
200 V
Reverse Current
50 μA
Reverse Recovery Time
1800 ns ns
Surge Current
40 A
Switching Speed
Standard ns
Temperature Operating Range
-55 to +150 °C
Overview
Features:
Very Low Profile
Ideal for Automated Placement
Glass Passivated Chip Junction
Low Forward Voltage Drop
Low Leakage Current
High Forward Surge Capability
Meets MSL level 1, Per J-STD-020, LF Maximum Peak of 260°C
Solder Dip 260°C, 40 s
Component in Accordance to RoHS 2002/95/EC and WEEE 2002/96/EC
