All Products

Fuji Semiconductor FMW47N60S1HF

Fuji Semiconductor - FMW47N60S1HF - IC, MOSFET;  N-Channel, Super Junction;  600V;  40A;  390W;  TO-247-P2 View larger image View larger image
Image may be a representation.
See specs for product details.

Fuji Semiconductor IC, MOSFET; N-Channel, Super Junction; 600V; 40A; 390W; TO-247-P2
Mfr. Part#:

Allied Stock#: 70241471

 RoHS Compliant Part



View FMW47N60S1HF Datasheet Datasheet

View More from Fuji Semiconductor >>
  • Non Cancelable Non Returnable (NCNR) part. Please see Terms of NCNR.
Pricing (USD) & Availability
Standard Pricing
$11.05 (Each)

0 can ship immediately.

Request Lead Time

Minimum Quantity: 100 |  Multiples Of: 100


Capacitance, Input: 4000 pF @ 10 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: ±47 A
Dimensions: 15 x 5.3 x 20.95 mm
Gate Charge, Total: 120 nC
Height: 0.825" (20.95mm)
Length: 0.59" (15mm)
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to 150 °C
Package Type: TO-247-P2
Polarization: N-Channel
Power Dissipation: 390 W
Resistance, Drain to Source On: 0.07 Ω
Resistance, Thermal, Junction to Case: 0.32 °C/W
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Thermal Resistance, Junction to Ambient: 50 °C/W
Time, Turn-Off Delay: 135 ns
Time, Turn-On Delay: 36 ns
Transconductance, Forward: 38 S
Typical Gate Charge @ Vgs: 120 nC @ 10 V
Voltage, Breakdown, Drain to Source: 600 V
Voltage, Drain to Source: 600 V
Voltage, Forward, Diode: 1.35 V
Voltage, Gate to Source: ±30 V
Voltage, Threshold: 2.5-3.5 V
Width: 0.209" (5.3mm)


  • Low On-State Resistance
  • Low Switching Loss
  • Easy to Use (More Controllable Switching dV/dt by Rg
  • UPS
  • Server
  • Telecom
  • Power Conditioner System
  • Power Supply