Fuji Semiconductor 2SK3780-01

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MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 29 Milliohms; ID 73A; TO-247; PD 410W; VGS +/-3
Mfr. Part#: 2SK3780-01
Allied Stock#: 70212481

RoHS Compliant Part

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Datasheet

Pricing (USD) & Availability
Standard Pricing
$5.120 (Each)
500 $5.120
Availability

0 can ship immediately.

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Minimum Quantity: 500

Multiples Of: 500

Specifications

Capacitance, Input : 3800 pF @ 75 V
Channel Type : N
Configuration : Single
Current, Drain : 73 A
Dimensions : 15.5 x 5 x 21.5 mm
Gate Charge, Total : 80 nC
Height : 0.846" (21.5mm)
Length : 0.61" (15.5mm)
Mounting Type : Through Hole
Number of Elements per Chip : 1
Number of Pins : 3
Operating and Storage Temperature : -55 to 150 °C
Package Type : TO-247
Polarization : N-Channel
Power Dissipation : 410 W
Product Header : N-Channel Silicon Power MOSFET
Resistance, Drain to Source On : 36 mΩ
Resistance, Thermal, Junction to Case : 0.30499999999999999 °C/W
Temperature, Operating, Maximum : +150 °C
Temperature, Operating, Minimum : -55 °C
Temperature, Operating, Range : -55 to +150 °C
Thermal Resistance, Junction to Ambient : 50 °C/W
Time, Turn-Off Delay : 60 ns
Time, Turn-On Delay : 40 ns
Transconductance, Forward : 24 S
Typical Gate Charge @ Vgs : 80 nC @ 10 V
Voltage, Breakdown, Drain to Source : 200 V
Voltage, Drain to Source : 200 V
Voltage, Forward, Diode : 1.2 V
Voltage, Gate to Source : ±30 V
Voltage, Threshold : 2.5-3.5 V
Width : 0.197" (5mm)

Overview

Features:

  • FAP-III = Logic Level, High Avalanche Ruggedness
  • FAP-IIS = VGS ±35 V, VGS(th) 4.0 ±0.5 V
  • FAP-IIA =Reduced Turn Off Time
  • FAP-IIIBH = High Speed Non Logic
  • FAP-IIIB = Logic Level, VGS(th) 1.5 ±0.5 V
  • FAP-G = Ultra Fast Switching
  • Trench Gate Series = Ultra Low On-Resistance

  • Product Added to Cart
    Fuji Semiconductor
    MOSFET; Power; N-Ch; VDSS 200V; RDS(ON) 29 Milliohms; ID 73A; TO-247; PD 410W; VGS +/-3
    Allied Stock #: 70212481
    Mfr's Part #: 2SK3780-01
    $5.120 Each
    Quantity added: