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Siliconix / Vishay SI9945AEY-T1-E3

Siliconix / Vishay - SI9945AEY-T1-E3 - MOSFET,  Power;  Dual N;  60 V;  + 20 V;  2.4 W;  SO-8;  75 A (Continuous);  -55 degC
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Siliconix / Vishay MOSFET, Power; Dual N; 60 V; + 20 V; 2.4 W; SO-8; 75 A (Continuous); -55 degC
Mfr. Part#:
SI9945AEY-T1-E3

Allied Stock#: 70026077

 RoHS Compliant Part

Resources

View SI9945AEY-T1-E3 Datasheet Datasheet

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Specifications

Brand/Series: SI99 Series
Current, Drain: ±3.7 A
Gate Charge, Total: 11 nC
Package Type: SO-8
Polarization: N-Channel
Power Dissipation: 2.4 W
Resistance, Drain to Source On: 0.08 Ohms
Temperature, Operating: -55 to 175 °C
Thermal Resistance, Junction to Ambient: 93 °C/W
Time, Turn-Off Delay: 21 ns
Time, Turn-On Delay: 9 ns
Transconductance, Forward: 11 S
Type: Dual Power
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Forward, Diode: 1.2 V
Voltage, Gate to Source: ±20 V

Overview

Features:
  • TrenchFET® Power MOSFETs
  • Maximum Junction Temperature: 175°C Rated