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Siliconix / Vishay SI3457BDV-T1-E3

Siliconix / Vishay - SI3457BDV-T1-E3 - MOSFET,  Power; P-Ch; VDSS -30V; RDS(ON) 0.044Ohm; ID -3.7A; TSOP-6; PD 1.14W; VGS +/-20
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Siliconix / Vishay MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.044Ohm; ID -3.7A; TSOP-6; PD 1.14W; VGS +/-20
Mfr. Part#:
SI3457BDV-T1-E3

Allied Stock#: 70026101

 RoHS Compliant Part

 

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View SI3457BDV-T1-E3 Datasheet Datasheet

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Pricing (USD) & Availability
Standard Pricing
$0.270 (Each)
3000$0.270
6000$0.250
9000$0.220
Availability

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Minimum Quantity: 3000 |  Multiples Of: 3000

Specifications

Brand/Series: SI34 Series
Channel Mode: Enhancement
Channel Type: P
Configuration: Quad Drain
Current, Drain: -3 A
Dimensions: 3.1 x 1.7 x 1 mm
Gate Charge, Total: 12.5 nC
Height: 1 mm
Length: 3.1 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 6
Package Type: TSOP
Polarization: P-Channel
Power Dissipation: 1.14 W
Resistance, Drain to Source On: 0.1 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 30 ns
Time, Turn-On Delay: 7 ns
Transconductance, Forward: 10 S
Typical Gate Charge @ Vgs: 12.5 nC @ -15 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -0.8 V
Voltage, Gate to Source: ±20 V
Width: 0.067" (1.7mm)

Overview

Features:
  • Halogen-Free Option Available
  • Low-Side Switching
  • Low On-Resistance: 5 Ω
  • Low Threshold: 0.9 V (Typ.)
  • Fast Switching Speed: 35 ns (Typ.)
  • TrenchFET® Power MOSFETs: 1.5 V Rated
  • ESD Protected: 2000 V

    Applications:
  • Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories
  • Battery Operated Systems
  • Power Supply Converter Circuits
  • Load/Power Switching Cell Phones, Pagers