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Siliconix / Vishay SI2307BDS-T1-E3

Siliconix / Vishay - SI2307BDS-T1-E3 - MOSFET,  Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W View larger image View larger image
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Siliconix / Vishay MOSFET, Power; P-Ch; VDSS -30V; RDS(ON) 0.063Ohm; ID -2.5A; TO-236 (SOT-23); PD 0.75W
Mfr. Part#:

Allied Stock#: 70026066

 RoHS Compliant Part



View SI2307BDS-T1-E3 Datasheet Datasheet

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Minimum Quantity: 3000 |  Multiples Of: 3000


Brand/Series: TrenchFET Series
Capacitance, Input: 380 pF @ -15 V
Channel Mode: Enhancement
Channel Type: P
Configuration: Single
Current, Drain: -2 A
Dimensions: 3.04 x 1.4 x 1.02 mm
Gate Charge, Total: 9 nC
Height: 1.02 mm
Length: 3.04 mm
Mounting Type: Surface Mount
Number of Elements per Chip: 1
Number of Pins: 3
Package Type: TO-236
Polarization: P-Channel
Power Dissipation: 0.75 W
Resistance, Drain to Source On: 0.13 Ω
Temperature, Operating, Maximum: +150 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +150 °C
Time, Turn-Off Delay: 25 ns
Time, Turn-On Delay: 9 ns
Transconductance, Forward: 5 S
Typical Gate Charge @ Vgs: 9 nC @ -15 V
Voltage, Breakdown, Drain to Source: -30 V
Voltage, Diode Forward: -1.2 V
Voltage, Drain to Source: -30 V
Voltage, Forward, Diode: -0.85 V
Voltage, Gate to Source: ±20 V
Width: 0.055" (1.4mm)


  • Halogen-Free According to IEC 61249-2-21 Definition
  • TrenchFET® Power MOSFET: 1.8 V Rated
  • Ultra Low On-Resistance for Increased Battery Life
  • New PowerPAK® Package - Low Thermal Resistance, RthJC - Low 1.07 mm Profile
  • Compliant to RoHS Directive 2002/95/EC

  • Load/Power Switching in Portable Devices