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ON Semiconductor BS170G

ON Semiconductor - BS170G - MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8 Ohms; ID 0.5A; TO-92 (TO-226); PD 350mW; -55degc View larger image View larger image
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ON Semiconductor MOSFET; N-Ch; VDSS 90VDC; RDS(ON) 1.8 Ohms; ID 0.5A; TO-92 (TO-226); PD 350mW; -55degc
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Allied Stock#: 70099793

 RoHS Compliant Part


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Category: Small Signal MOSFET
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Dimensions: 4.45 x 3.18 x 4.32 mm
Forward Transconductance: 200 mS
Height: 4.32 mm
Length: 4.45 mm
Maximum Continuous Drain Current: 0.5 A
Maximum Drain Source Resistance: 5 Ω
Maximum Drain Source Voltage: 90 V
Maximum Gate Source Voltage: ±20 V
Maximum Operating Temperature: +150 °C
Maximum Power Dissipation: 350 mW
Minimum Operating Temperature: -55 °C
Mounting Type: Through Hole
Number of Elements per Chip: 1
Operating Temperature Range: -55 to +150 °C
Package Type: TO-92
Pin Count: 3
Typical Input Capacitance @ Vds: Maximum of 60 pF @ 25 V
Typical Turn On Delay Time: 4 ns
Typical TurnOff Delay Time: 4 ns
Width: 3.18 mm