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NTE Electronics, Inc. NTE2395

NTE Electronics, Inc. - NTE2395 - POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE View larger image View larger image
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NTE Electronics, Inc. POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE
Mfr. Part#:
NTE2395

Allied Stock#: 70215908

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$6.02 (Each)
1$6.020
50$5.470
100$5.010
250$4.630
Availability

11 can ship immediately.

228 can ship in 10 days.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Brand/Series: MOSFET Series
Capacitance, Input: 1900 pF @ 25 V
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Current, Drain: 50 A
Fall Time: 92 ns (Typ.)
Gate Charge, Total: 67 nC
Height: 15.49 mm
Length: 10.67 mm
Mounting Type: Through Hole
Number of Elements per Chip: 1
Number of Pins: 3
Operating and Storage Temperature: -55 to +175 °C
Package Type: TO-220
Polarization: N-Channel
Power Dissipation: 150 W
Resistance, Drain to Source On: 0.028 Ω
Resistance, Thermal, Junction to Case: 1 °C⁄W
Temperature, Operating, Maximum: +175 °C
Temperature, Operating, Minimum: -55 °C
Temperature, Operating, Range: -55 to +175 °C
Thermal Resistance, Junction to Ambient: 62 °C⁄W
Time, Turn-Off Delay: 45 ns
Time, Turn-On Delay: 14 ns
Transconductance, Forward: 15 S
Typical Gate Charge @ Vgs: Maximum of 67 nC @ 10 V
Voltage, Breakdown, Drain to Source: 60 V
Voltage, Drain to Source: 60 V
Voltage, Forward, Diode: 2.5 V
Voltage, Gate to Source: ±20 V

Overview

Enhancement Mode MOSFET, N-Channel, 0.028 Ohm (Max.)
  • Dynamic dv/dt rating
  • +175°C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements
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