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NTE Electronics, Inc. NTE2395

NTE Electronics, Inc. - NTE2395 - POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE View larger image View larger image
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NTE Electronics, Inc. POWER MOSFET N-CHANNEL 60V ID=50A TO-220 CASE HIGH SPEED SWITCH ENHANCEMENT MODE
Mfr. Part#:
NTE2395

Allied Stock#: 70215908

 RoHS Compliant Part

 
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Pricing (USD) & Availability
Standard Pricing
$6.02 (Each)
1$6.020
50$5.470
100$5.010
250$4.630
Availability

37 can ship immediately.

882 can ship in 10 days.

Request Lead Time

Minimum Quantity: 1 |  Multiples Of: 1

Specifications

Category: High Speed Switching
Channel Mode: Enhancement
Channel Type: N
Configuration: Single
Forward Diode Voltage: 2.5 V
Forward Transconductance: 15 S
Height: 15.49 mm
Length: 10.67 mm
Maximum Continuous Drain Current: 50 A
Maximum Drain Source Resistance: 0.028 Ω
Maximum Drain Source Voltage: 60 V
Maximum Gate Source Voltage: ±20 V
Maximum Operating Temperature: +175 °C
Maximum Power Dissipation: 150 W
Minimum Operating Temperature: -55 °C
Mounting Type: Through Hole
Number of Elements per Chip: 1
Operating Temperature Range: -55 to +175 °C
Package Type: TO-220
Pin Count: 3
Typical Gate Charge @ Vgs: Maximum of 67 nC @ 10 V
Typical Input Capacitance @ Vds: 1900 pF @ 25 V
Typical Turn On Delay Time: 14 ns
Typical TurnOff Delay Time: 45 ns

Overview

Enhancement Mode MOSFET, N-Channel, 0.028 Ohm (Max.)
  • Dynamic dv⁄dt rating
  • +175°C operating temperature
  • Fast switching
  • Ease of paralleling
  • Simple drive requirements